IGP20N65H5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGP20N65H5
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 125 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 42 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
trⓘ - Tiempo de subida, typ: 8 nS
Coesⓘ - Capacitancia de salida, typ: 30 pF
Encapsulados: TO220
Búsqueda de reemplazo de IGP20N65H5 IGBT
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IGP20N65H5 datasheet
igp20n65h5.pdf
IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology IGP20N65H5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGP20N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologi
igp20n65f5.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGP20N65F5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGP20N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant
igp20n60h3 rev1 2g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGP20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G
igp20n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGP20N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junctio
Otros transistores... NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G , STGB10H60DF , STGB15H60DF , STGP10H60DF , STGP15H60DF , IGP20N65F5 , G50T65D , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , OM6520SC , STGD19N40LZ .
History: APT80GA60S | APT50GP60SG | APT75GP120JDQ3 | APT45GP120BG | APT50GN120L2DQ2G | APT50GT120B2RG | GT50J341
History: APT80GA60S | APT50GP60SG | APT75GP120JDQ3 | APT45GP120BG | APT50GN120L2DQ2G | APT50GT120B2RG | GT50J341
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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