IGP20N65H5 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IGP20N65H5
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 125 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 42 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 8 nS
Coesⓘ - Выходная емкость, типовая: 30 pF
Тип корпуса: TO220
Аналог (замена) для IGP20N65H5
IGP20N65H5 Datasheet (PDF)
igp20n65h5.pdf
IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP20N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP20N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi
igp20n65f5.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP20N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP20N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant
igp20n60h3 rev1 2g.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
igp20n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio
Другие IGBT... NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G , STGB10H60DF , STGB15H60DF , STGP10H60DF , STGP15H60DF , IGP20N65F5 , MBQ50T65FDSC , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , OM6520SC , STGD19N40LZ .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2