IGP20N65H5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IGP20N65H5
Тип транзистора: IGBT
Маркировка: G20EH5
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 125 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 42 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 4.8 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 8 nS
Coesⓘ - Выходная емкость, типовая: 30 pF
Qgⓘ - Общий заряд затвора, typ: 48 nC
Тип корпуса: TO220
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IGP20N65H5 Datasheet (PDF)
igp20n65h5.pdf

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igp20n65f5.pdf

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igp20n60h3.pdf

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