IGP20N65H5 Specs and Replacement
Type Designator: IGP20N65H5
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 42 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 8 nS
Coesⓘ - Output Capacitance, typ: 30 pF
Package: TO220
IGP20N65H5 Substitution - IGBT ⓘ Cross-Reference Search
IGP20N65H5 datasheet
igp20n65h5.pdf
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igp20n65f5.pdf
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igp20n60h3 rev1 2g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGP20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G... See More ⇒
igp20n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGP20N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junctio... See More ⇒
Specs: NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G , STGB10H60DF , STGB15H60DF , STGP10H60DF , STGP15H60DF , IGP20N65F5 , G50T65D , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , OM6520SC , STGD19N40LZ .
Keywords - IGP20N65H5 transistor spec
IGP20N65H5 cross reference
IGP20N65H5 equivalent finder
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