HGTD3N60B3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTD3N60B3  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 33.3 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 7 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 16 nS

Encapsulados: TO251

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HGTD3N60B3 datasheet

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HGTD3N60B3

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HGTD3N60B3

HGTD3N60C3S, HGTP3N60C3 Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1

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HGTD3N60B3

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HGTD3N60B3

MOSTRAR MÁS

Otros transistores... HGTD10N50F1, HGTD10N50F1S, HGTD10N50F1S9A, HGTD1N120BNS, HGTD1N120CNS, HGTD2N120BNS, HGTD2N120CNS, HGTD3N60A4S, SGT40N60FD2PN, HGTD3N60B3S, HGTD3N60C3, HGTD3N60C3S, HGT5A27N120BN, HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S