HGTD3N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HGTD3N60C3S, HGTP3N60C3Data Sheet December 20016A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HGTD3N60C3,S E M I C O N D U C T O RHGTD3N60C3SJune 1996 6A, 600V, UFS Series N-Channel IGBTFeatures PackagingJEDEC TO-251AA 6A, 600V at TC = +25oC 600V Switching SOA CapabilityEMITTERCOLLECTOR Typical Fall Time - 130ns at TJ = +150oCGATE Short Circuit Rating Low Conduction LossCOLLECTOR(FLANGE)DescriptionThe HGTD3N60C3 and HGTD3N60C3S are MOS ga