HGTD3N60B3 IGBT. Datasheet pdf. Equivalent
Type Designator: HGTD3N60B3
Type: IGBT
Marking Code: G3N60B
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 33.3 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 7 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 16 nS
Qgⓘ - Total Gate Charge, typ: 18 nC
Package: TO251
HGTD3N60B3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTD3N60B3 Datasheet (PDF)
hgtd3n60c3s hgtp3n60c3.pdf
HGTD3N60C3S, HGTP3N60C3Data Sheet December 20016A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1
hgtd3n60a4s hgtp3n60a4.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
hgtd3n60.pdf
HGTD3N60C3,S E M I C O N D U C T O RHGTD3N60C3SJune 1996 6A, 600V, UFS Series N-Channel IGBTFeatures PackagingJEDEC TO-251AA 6A, 600V at TC = +25oC 600V Switching SOA CapabilityEMITTERCOLLECTOR Typical Fall Time - 130ns at TJ = +150oCGATE Short Circuit Rating Low Conduction LossCOLLECTOR(FLANGE)DescriptionThe HGTD3N60C3 and HGTD3N60C3S are MOS ga
Datasheet: HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , HGTD3N60A4S , IHW20N135R5 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S , HGT5A27N120BN , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2