IRG4MC50F IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4MC50F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 250 pF
Encapsulados: TO254AA
Búsqueda de reemplazo de IRG4MC50F IGBT
- Selección ⓘ de transistores por parámetros
IRG4MC50F datasheet
irg4mc50f.pdf
PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E Ceramic eyelets n-cha
irg4mc50u.pdf
PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E Ceramic eyelets
irg4mc30f.pdf
PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHz VCE(on) max =1.7V G High Operating Frequency Switching-loss Rating includes all "tail" losses E @VGE = 15V, IC = 15A Ceramic Eyelets n-channe
irg4mc40u.pdf
PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof VCE(on)max = 2.1V UltraFast Speed Operation 8KHz - 40KHz, G > 200KHz in Resonent Mode High Operating Frequency @VGE =15V, IC = 20A E Switching-loss Rating includes all "tail
Otros transistores... MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , IHW20N65R5 , SGP30N60 , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc2690 | d718 datasheet | mp38 transistor | 2sc2389 | b331 transistor | 2sa720 | 2sc1345 | 2sd555