IRG4MC50F Specs and Replacement
Type Designator: IRG4MC50F
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 35 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Package: TO254AA
IRG4MC50F Substitution - IGBT ⓘ Cross-Reference Search
IRG4MC50F datasheet
irg4mc50f.pdf
PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E Ceramic eyelets n-cha... See More ⇒
irg4mc50u.pdf
PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E Ceramic eyelets... See More ⇒
irg4mc30f.pdf
PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHz VCE(on) max =1.7V G High Operating Frequency Switching-loss Rating includes all "tail" losses E @VGE = 15V, IC = 15A Ceramic Eyelets n-channe... See More ⇒
irg4mc40u.pdf
PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof VCE(on)max = 2.1V UltraFast Speed Operation 8KHz - 40KHz, G > 200KHz in Resonent Mode High Operating Frequency @VGE =15V, IC = 20A E Switching-loss Rating includes all "tail... See More ⇒
Specs: MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , IHW20N65R5 , SGP30N60 , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG .
Keywords - IRG4MC50F transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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