STGB18N40LZT4 Todos los transistores

 

STGB18N40LZT4 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGB18N40LZT4

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 390 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 12 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.3 V @25℃

Coesⓘ - Capacitancia de salida, typ: 90 pF

Encapsulados: TO263

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STGB18N40LZT4 datasheet

 ..1. Size:887K  st
stgb18n40lzt4 stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB

 ..2. Size:888K  st
stgb18n40lzt4.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB

 3.1. Size:888K  st
stgb18n40lz.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

 3.2. Size:890K  st
stgb18n40lz stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

Otros transistores... KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , IHW20N65R5 , IRG4MC50F , SGTN15C120HW , IRGP4066D , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG .

History: VS-GB600AH120N

 

 

 


History: VS-GB600AH120N

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