STGB18N40LZT4 PDF and Equivalents Search

 

STGB18N40LZT4 Specs and Replacement

Type Designator: STGB18N40LZT4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 390 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 12 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃

Coesⓘ - Output Capacitance, typ: 90 pF

Package: TO263

 STGB18N40LZT4 Substitution

- IGBT ⓘ Cross-Reference Search

 

STGB18N40LZT4 datasheet

 ..1. Size:887K  st
stgb18n40lzt4 stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB ... See More ⇒

 ..2. Size:888K  st
stgb18n40lzt4.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB ... See More ⇒

 3.1. Size:888K  st
stgb18n40lz.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3... See More ⇒

 3.2. Size:890K  st
stgb18n40lz stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3... See More ⇒

Specs: KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , IHW20N65R5 , IRG4MC50F , SGTN15C120HW , IRGP4066D , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG .

Keywords - STGB18N40LZT4 transistor spec

 STGB18N40LZT4 cross reference
 STGB18N40LZT4 equivalent finder
 STGB18N40LZT4 lookup
 STGB18N40LZT4 substitution
 STGB18N40LZT4 replacement

 

 

 


🌐 : EN  ES  РУ

social

LIST

Last Update

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE

 

 

 

Popular searches

mp38 transistor | 2sc2389 | b331 transistor | 2sa720 | 2sc1345 | 2sd555 | a950 transistor | k2611

 

 

↑ Back to Top
.