All IGBT. STGB18N40LZT4 Datasheet

 

STGB18N40LZT4 Datasheet and Replacement


   Type Designator: STGB18N40LZT4
   Type: IGBT + Built-in Zener Diodes
   Marking Code: GB18N40LZ
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 390 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 12 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qgⓘ - Total Gate Charge, typ: 29 nC
   Package: TO263
      - IGBT Cross-Reference

 

STGB18N40LZT4 Datasheet (PDF)

 ..1. Size:887K  st
stgb18n40lzt4 stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB

 ..2. Size:888K  st
stgb18n40lzt4.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB

 3.1. Size:888K  st
stgb18n40lz.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

 3.2. Size:890K  st
stgb18n40lz stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZT4

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

Datasheet: KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , IHW20N65R5 , IRG4MC50F , SGTN15C120HW , CRG60T60AK3HD , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG .

Keywords - STGB18N40LZT4 transistor datasheet

 STGB18N40LZT4 cross reference
 STGB18N40LZT4 equivalent finder
 STGB18N40LZT4 lookup
 STGB18N40LZT4 substitution
 STGB18N40LZT4 replacement

 

 
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