STGB18N40LZT4 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: STGB18N40LZT4
Тип транзистора: IGBT + Built-in Zener Diodes
Маркировка: GB18N40LZ
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 150 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 390 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 12 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.3 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 4.5 V
Tjⓘ - Максимальная температура перехода: 175 ℃
Coesⓘ - Выходная емкость, типовая: 90 pF
Qgⓘ - Общий заряд затвора, typ: 29 nC
Тип корпуса: TO263
Аналог (замена) для STGB18N40LZT4
STGB18N40LZT4 Datasheet (PDF)
stgb18n40lzt4 stgd18n40lz stgp18n40lz.pdf
STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB
stgb18n40lzt4.pdf
STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB
stgb18n40lz.pdf
STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3
stgb18n40lz stgd18n40lz stgp18n40lz.pdf
STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3
stgb19nc60hdt4 stgf19nc60hd stgp19nc60hd stgw19nc60hd.pdf
STGB19NC60HDT4, STGF19NC60HD,STGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with ultrafast diodeDatasheet - production dataFeaturesTAB Low on-voltage drop (VCE(sat)) Very soft ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220FPTAB High frequency motor drives SMPS and PFC in both hard switch and resonant topologies32 3
stgb10nc60kd.pdf
STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
stgb10nb40lz.pdf
STGB10NB40LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB10NB40LZ CLAMPED
stgb19nc60hd.pdf
STGB19NC60HDT4, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-247
stgb19nc60kdt4 stgf19nc60kd stgp19nc60kd.pdf
STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction RES IES31susceptibility) D2 PAK3 Short-circuit withstand time 10 s 21 IGBT co-packaged with ultrafast free-TO-220FPTABwheeling diode Applications
stgb10nb60s.pdf
STGB10NB60SSTGP10NB60S16 A, 600 V, low drop IGBTFeatures Low on-voltage drop (VCE(sat)) High current capabilityTABTABApplications3 Light dimmer 3 121 Static relaysTO-220 D2PAK Motor driveDescriptionThis IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagramdrop in low-fr
stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd.pdf
STGB19NC60HD, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) Very soft ultra fast recovery anti-parallel diode33211DPAKApplicationsTO-220 High frequency motor controls SMPS and PFC in both hard switch and resonant topologies33221 1DescriptionTO-247TO-220FPThis IGBT utilize
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
stgb19nc60w.pdf
STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc
stgb10n60.pdf
STGP10N60L N-CHANNEL 10A - 600V - TO-220LOGIC LEVEL IGBTTYPE VCES VCE(sat) ICSTGP10N60L 600 V
stgb19nc60h stgp19nc60h stgw19nc60h.pdf
STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t
stgb14nc60kdt4 stgf14nc60kd stgp14nc60kd.pdf
STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 14 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction res ies31susceptibility) D2 PAK3 Very soft ultrafast recovery antiparallel diode 21 Short-circuit withstand time 10 s TO-220FPTABApplications H
stgb10nc60k stgp10nc60k stgd10nc60k.pdf
STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V
stgb15h60df.pdf
STGB15H60DF, STGF15H60DF, STGP15H60DFTrench gate field-stop IGBT, H series 600 V, 15 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor cont
stgb19nc60k.pdf
STGB19NC60KSTGP19NC60K20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s33 IGBT co-packaged with ultra fast free-wheeling 121diodeD2PAKTO-220Applications High frequency inverters Motor driversDescriptionFigure 1.
stgb19nc60kd stgf19nc60kd stgp19nc60kd.pdf
STGB19NC60KDSTGF19NC60KD - STGP19NC60KD20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility)33 Short circuit withstand time 10 s 121 IGBT co-packaged with ultra fast free-wheeling D2PAKTO-220diodeApplications321 High frequency invertersTO-220FP Mot
stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor
stgb10m65df2.pdf
STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat)3 Low thermal resistance 1 Soft and very
stgb15h60df stgf15h60df stgp15h60df.pdf
STGB15H60DF, STGF15H60DF, STGP15H60DFDatasheetTrench gate field-stop IGBT, H series 600 V, 14 A high speedFeaturesTAB High speed switching31 Tight parameters distribution2D PAK321 Safe parallelingTO-220FPTAB Low thermal resistance Short-circuit rated32 Ultrafast soft recovery antiparallel diode1TO-220C(2, TAB) Applications Mo
stgb14nc60kd stgf14nc60kd stgp14nc60kd.pdf
STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App
stgb14nc60k stgd14nc60k.pdf
STGB14NC60KSTGD14NC60KN-channel 14A - 600V -DPAK - D2PAKShort circuit rated PowerMESH IGBTGeneral featuresIC VCE(sat) Type VCES(Max)@ 25C @100CSTGB14NC60K 600V
stgb19nc60kd stgf19nc60kd stgp19nc60kd.pdf
STGB19NC60KDSTGF19NC60KD - STGP19NC60KD20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility)33 Short circuit withstand time 10 s 121 IGBT co-packaged with ultra fast free-wheeling D2PAKTO-220diodeApplications321 High frequency invertersTO-220FP Mot
stgb15m65df2.pdf
STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) @ I = 15 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat)3 Low thermal resistance 1 Soft and ver
stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd stgwa19nc60hd.pdf
STGx19NC60HDSTGWA19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode31321DPAKApplicationsTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-220FPTO-247This IGBT utilize
stgb10nb37lz stgp10nb37lz.pdf
STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
stgb14nc60kd.pdf
STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App
stgb10nc60k.pdf
STGB10NC60K10 A, 600 V short-circuit rugged IGBTFeatures Low on voltage drop (VCESAT) Short-circuit withstand time 10 sTABApplications High frequency motor controls31 SMPS and PFC in both hard switch and resonant topologiesDPAK Motor drivesDescriptionThis device utilizes the advanced Power MESH Figure 1. Internal schematic diagramprocess r
stgb10nc60hd.pdf
STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
stgb10nb37lz.pdf
STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
stgb19nc60h.pdf
STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t
stgb19nc60w stgp19nc60w stgw19nc60w.pdf
STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc
stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf
STGP10NB60SSTGP10NB60SFP- STGB10NB60SN-CHANNEL 10A - 600V - TO-220/TO-220FP/DPAKPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP10NB60S 600 V
stgb10h60df.pdf
STGB10H60DF, STGF10H60DF, STGP10H60DFTrench gate field-stop IGBT, H series 600 V, 10 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor cont
stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf
STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
stgb19nc60k stgp19nc60k.pdf
STGB19NC60KSTGP19NC60K20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s33 IGBT co-packaged with ultra fast free-wheeling 121diodeD2PAKTO-220Applications High frequency inverters Motor driversDescriptionFigure 1.
stgb19nc60s stgp19nc60s.pdf
STGB19NC60SSTGP19NC60S20 A, 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switchingTAB Optimized performance for medium operating frequencies.33121ApplicationD2PAKTO-220 Medium frequency motor drivesDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent tr
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2