STGP30H65F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGP30H65F  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 130 pF

Encapsulados: TO220AB

  📄📄 Copiar 

 Búsqueda de reemplazo de STGP30H65F IGBT

- Selecciónⓘ de transistores por parámetros

 

STGP30H65F datasheet

 ..1. Size:1046K  st
 stgp30h65f.pdf pdf_icon

STGP30H65F

STGP30H65F Trench gate field-stop IGBT, H series 650 V, 30 A high speed Datasheet - production data Features High speed switching Tight parameters distribution TAB Safe paralleling Low thermal resistance Short-circuit rated 3 2 1 Applications TO-220 Inverter UPS PFC Description Figure 1. Internal schematic diagram This device is an IGBT deve

 6.1. Size:612K  st
 stgp30h60df.pdf pdf_icon

STGP30H65F

STGB30H60DF STGP30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3 2 1 1 Ultrafast soft recovery antiparallel diode TO-220 Applications D PAK Motor control Description Fig

 6.2. Size:1944K  st
 stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf pdf_icon

STGP30H65F

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 D PAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 I

 6.3. Size:798K  st
 stgb30h60dfb stgp30h60dfb.pdf pdf_icon

STGP30H65F

STGB30H60DFB, STGP30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C TAB TAB High speed switching series Minimized tail current 3 Low saturation voltage VCE(sat) = 1.55 V (typ.) @ IC = 30 A 1 3 2 D PAK TO-220 2 Tight parameter distribution 1 Safe paralleling Positive V

MOSTRAR MÁS

Otros transistores... KGT15N135NDH, STGB30H60DF, STGP30H60DF, IKD10N60RA, IHW20N65R5, IRG4MC50F, SGTN15C120HW, STGB18N40LZT4, SGH80N60UFD, KGF20N60KDA, KGF20N60PA, NGTB15N120IHL, NGTB15N120FL, NGTB15N120FLWG, NGTB15N120L, NGTB15N120LWG, NGTB20N120IHS