STGP30H65F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGP30H65F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de STGP30H65F IGBT
STGP30H65F Datasheet (PDF)
stgp30h65f.pdf

STGP30H65FTrench gate field-stop IGBT, H series 650 V, 30 A high speedDatasheet - production dataFeatures High speed switching Tight parameters distributionTAB Safe paralleling Low thermal resistance Short-circuit rated321ApplicationsTO-220 Inverter UPS PFCDescriptionFigure 1. Internal schematic diagramThis device is an IGBT deve
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STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I
stgb30h60dfb stgp30h60dfb.pdf

STGB30H60DFB, STGP30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTABTAB High speed switching series Minimized tail current3 Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A132D PAK TO-220 2 Tight parameter distribution1 Safe paralleling Positive V
Otros transistores... KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , IHW20N65R5 , IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , IKW50N60H3 , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS .



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