STGP30H65F IGBT. Datasheet pdf. Equivalent
Type Designator: STGP30H65F
Type: IGBT
Marking Code: GP30H65F
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Qgⓘ - Total Gate Charge, typ: 105 nC
Package: TO220AB
STGP30H65F Transistor Equivalent Substitute - IGBT Cross-Reference Search
STGP30H65F Datasheet (PDF)
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