HGTD3N60C3S Datasheet. Equivalente

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HGTD3N60C3S, HGTP3N60C3 Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 hgtd3n60.pdf

HGTD3N60C3, S E M I C O N D U C T O R HGTD3N60C3S June 1996 6A, 600V, UFS Series N-Channel IGBT Features Packaging JEDEC TO-251AA 6A, 600V at TC = +25oC 600V Switching SOA Capability EMITTER COLLECTOR Typical Fall Time - 130ns at TJ = +150oC GATE Short Circuit Rating Low Conduction Loss COLLECTOR (FLANGE) Description The HGTD3N60C3 and HGTD3N60C3S are MOS ga