All IGBT. HGTD3N60C3S Datasheet


HGTD3N60C3S IGBT. Datasheet pdf. Equivalent

Type Designator: HGTD3N60C3S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 33W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 6A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 5

Package: TO252AA

HGTD3N60C3S Transistor Equivalent Substitute - IGBT Cross-Reference Search



HGTD3N60C3S Datasheet (PDF)

2.1. hgtd3n60.pdf Size:345K _harris_semi


HGTD3N60C3, S E M I C O N D U C T O R HGTD3N60C3S June 1996 6A, 600V, UFS Series N-Channel IGBT Features Packaging JEDEC TO-251AA 6A, 600V at TC = +25oC 600V Switching SOA Capability EMITTER COLLECTOR Typical Fall Time - 130ns at TJ = +150oC GATE Short Circuit Rating Low Conduction Loss COLLECTOR (FLANGE) Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high vol

Datasheet: HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , HGTD3N60A4S , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , IXGH60N60C2 , HGTD3N60C3S9A , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S .

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IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |



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