IGB30N60T IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGB30N60T
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 187 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
trⓘ - Tiempo de subida, typ: 21 nS
Coesⓘ - Capacitancia de salida, typ: 108 pF
Encapsulados: TO263
Búsqueda de reemplazo de IGB30N60T IGBT
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IGB30N60T datasheet
igb30n60t.pdf
IGB30N60T TRENCHSTOP Series q Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E TRENCHSTOP technology for 600V applications offers
igb30n60trev2 3g.pdf
IGB30N60T TrenchStop Series q Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for frequency inverters for washing machines, fans, E pumps and vacuum cleaners TrenchStop technology for 600 V applications offers - very tight parameter distr
igb30n60h3 rev1 1g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGB30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGB30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G
igb30n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGB30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGB30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junctio
Otros transistores... STGWT20V60F , F3L50R06W1E3_B11 , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , IRG4PF50W , IGW30N60T , IGP30N65F5 , IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG .
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