IGB30N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGB30N60T
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 187 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 21 nS
Coesⓘ - Capacitancia de salida, typ: 108 pF
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IGB30N60T IGBT
IGB30N60T Datasheet (PDF)
igb30n60t.pdf

IGB30N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum Gcleaners E TRENCHSTOP technology for 600V applications offers
igb30n60trev2 3g.pdf

IGB30N60T TrenchStop Series q Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for frequency inverters for washing machines, fans, Epumps and vacuum cleaners TrenchStop technology for 600 V applications offers : - very tight parameter distr
igb30n60h3 rev1 1g.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGB30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
igb30n60h3.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGB30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio
Otros transistores... STGWT20V60F , F3L50R06W1E3_B11 , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , GT60N321 , IGW30N60T , IGP30N65F5 , IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG .
History: IXBX75N170A | APTGS50X170TE3 | IRG7PH42UDPBF | TT060U065FB | MII150-12A4 | IXGH32N90B2 | 2MBI200UC-120
History: IXBX75N170A | APTGS50X170TE3 | IRG7PH42UDPBF | TT060U065FB | MII150-12A4 | IXGH32N90B2 | 2MBI200UC-120



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