IGB30N60T Specs and Replacement
Type Designator: IGB30N60T
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 187 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 108 pF
Package: TO263
IGB30N60T Substitution - IGBT ⓘ Cross-Reference Search
IGB30N60T datasheet
igb30n60t.pdf
IGB30N60T TRENCHSTOP Series q Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E TRENCHSTOP technology for 600V applications offers ... See More ⇒
igb30n60trev2 3g.pdf
IGB30N60T TrenchStop Series q Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for frequency inverters for washing machines, fans, E pumps and vacuum cleaners TrenchStop technology for 600 V applications offers - very tight parameter distr... See More ⇒
igb30n60h3 rev1 1g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGB30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGB30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G... See More ⇒
igb30n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGB30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGB30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junctio... See More ⇒
Specs: STGWT20V60F , F3L50R06W1E3_B11 , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , IRG4PF50W , IGW30N60T , IGP30N65F5 , IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG .
Keywords - IGB30N60T transistor spec
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