IGB30N60T Даташит. Аналоги. Параметры и характеристики.
Наименование: IGB30N60T
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 187 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 21 nS
Coesⓘ - Выходная емкость, типовая: 108 pF
Тип корпуса: TO263
- подбор IGBT транзистора по параметрам
IGB30N60T Datasheet (PDF)
igb30n60t.pdf

IGB30N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum Gcleaners E TRENCHSTOP technology for 600V applications offers
igb30n60trev2 3g.pdf

IGB30N60T TrenchStop Series q Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for frequency inverters for washing machines, fans, Epumps and vacuum cleaners TrenchStop technology for 600 V applications offers : - very tight parameter distr
igb30n60h3 rev1 1g.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGB30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
igb30n60h3.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGB30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MMG200D120B6TC | AOB30B65LN2V | APTGT75DA120D1
History: MMG200D120B6TC | AOB30B65LN2V | APTGT75DA120D1



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