HGT5A27N120BN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGT5A27N120BN
Tipo de transistor: IGBT
Código de marcado: 27N120BN
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 72 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.6(typ) V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Qgⓘ - Carga total de la puerta, typ: 270 nC
Paquete / Cubierta: TO247
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HGT5A27N120BN Datasheet (PDF)
hgtg27n120bn hgt5a27n120bn.pdf
HGTG27N120BN / HGT5A27N120BNData Sheet October 200472A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oCPunch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capabilityof the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15
hgt5a40n60a4d hgt1y40n60a4d.pdf
HGT5A40N60A4D / HGT1Y40N60A4DData Sheet May 2002600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 100kHz Operation at 390V, 40AThe HGT5A40N60A4D and HGT1Y40N60A4D are MOS 200kHz Operation at 390V, 20Agated high voltage switching devices combining the best 600V Switching SOA Capabilityfeatures of a MOSFET and a bipolar transistor. These de
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