HGT5A27N120BN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGT5A27N120BN  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 500 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 72 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Encapsulados: TO247

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HGT5A27N120BN datasheet

 ..1. Size:164K  fairchild semi
 hgtg27n120bn hgt5a27n120bn.pdf pdf_icon

HGT5A27N120BN

HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oC Punch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capability of the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15

 9.1. Size:230K  1
 hgt5a40n60a4d hgt1y40n60a4d.pdf pdf_icon

HGT5A27N120BN

HGT5A40N60A4D / HGT1Y40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode 100kHz Operation at 390V, 40A The HGT5A40N60A4D and HGT1Y40N60A4D are MOS 200kHz Operation at 390V, 20A gated high voltage switching devices combining the best 600V Switching SOA Capability features of a MOSFET and a bipolar transistor. These de

Otros transistores... HGTD1N120CNS, HGTD2N120BNS, HGTD2N120CNS, HGTD3N60A4S, HGTD3N60B3, HGTD3N60B3S, HGTD3N60C3, HGTD3N60C3S, IKW50N60T, HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S, HGTD7N60A4S, HGTD7N60B3, HGTD7N60B3S, HGTD7N60C3