All IGBT. HGT5A27N120BN Datasheet

 

HGT5A27N120BN Datasheet and Replacement


   Type Designator: HGT5A27N120BN
   Type: IGBT
   Marking Code: 27N120BN
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 72 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6(typ) V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Qgⓘ - Total Gate Charge, typ: 270 nC
   Package: TO247
      - IGBT Cross-Reference

 

HGT5A27N120BN Datasheet (PDF)

 ..1. Size:164K  fairchild semi
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HGT5A27N120BN

HGTG27N120BN / HGT5A27N120BNData Sheet October 200472A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oCPunch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capabilityof the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15

 9.1. Size:230K  1
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HGT5A27N120BN

HGT5A40N60A4D / HGT1Y40N60A4DData Sheet May 2002600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 100kHz Operation at 390V, 40AThe HGT5A40N60A4D and HGT1Y40N60A4D are MOS 200kHz Operation at 390V, 20Agated high voltage switching devices combining the best 600V Switching SOA Capabilityfeatures of a MOSFET and a bipolar transistor. These de

Datasheet: HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , HGTD3N60A4S , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S , SGT50T65FD1PN , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 .

History: MMG75J120U6HN | 2SH29

Keywords - HGT5A27N120BN transistor datasheet

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