IGP30N65H5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGP30N65H5
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 188 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 55 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
trⓘ - Tiempo de subida, typ: 9 nS
Coesⓘ - Capacitancia de salida, typ: 45 pF
Encapsulados: TO220
Búsqueda de reemplazo de IGP30N65H5 IGBT
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IGP30N65H5 datasheet
igp30n65h5.pdf
IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology IGP30N65H5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGP30N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologi
igp30n65f5.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGP30N65F5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGP30N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant
igp30n60t.pdf
IGP30N60T TrenchStop Series IGW30N60T Low Loss IGBT in Trench and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers - very tight paramete
igp30n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGP30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGP30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junctio
Otros transistores... KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , IGB30N60T , IGW30N60T , IGP30N65F5 , TGAN40N60FD , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG , NGTB20N120IHL , NGTB25N120IHL , IRGP6630D .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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