Справочник IGBT. IGP30N65H5

 

IGP30N65H5 Даташит. Аналоги. Параметры и характеристики.


   Наименование: IGP30N65H5
   Тип транзистора: IGBT
   Маркировка: G30EH5
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 188 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 55 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 4.8 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 9 nS
   Coesⓘ - Выходная емкость, типовая: 45 pF
   Qgⓘ - Общий заряд затвора, typ: 70 nC
   Тип корпуса: TO220
     - подбор IGBT транзистора по параметрам

 

IGP30N65H5 Datasheet (PDF)

 ..1. Size:1929K  infineon
igp30n65h5.pdfpdf_icon

IGP30N65H5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP30N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi

 6.1. Size:1932K  infineon
igp30n65f5.pdfpdf_icon

IGP30N65H5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP30N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP30N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

 7.1. Size:379K  infineon
igp30n60t.pdfpdf_icon

IGP30N65H5

IGP30N60T TrenchStop Series IGW30N60TLow Loss IGBT in Trench and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight paramete

 7.2. Size:2105K  infineon
igp30n60h3.pdfpdf_icon

IGP30N65H5

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGP30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio

Другие IGBT... KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , IGB30N60T , IGW30N60T , IGP30N65F5 , IRG7S313U , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG , NGTB20N120IHL , NGTB25N120IHL , IRGP6630D .

 

 
Back to Top

 


 
.