IGP30N65H5 Datasheet. Specs and Replacement

Type Designator: IGP30N65H5  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 188 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 55 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 9 nS

Coesⓘ - Output Capacitance, typ: 45 pF

Package: TO220

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IGP30N65H5 datasheet

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IGP30N65H5

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IGP30N65H5

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGP30N65F5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGP30N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant... See More ⇒

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IGP30N65H5

IGP30N60T TrenchStop Series IGW30N60T Low Loss IGBT in Trench and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers - very tight paramete... See More ⇒

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IGBT High speed IGBT in Trench and Fieldstop technology IGP30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGP30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junctio... See More ⇒

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Specs: KGF30N60KDA, KGF30N60PA, IRG7PH35UD1-EP, IRG7PH35UD1M, IRG8P25N120KD, IGB30N60T, IGW30N60T, IGP30N65F5, YGW75N65F1, IKP30N65F5, IKP30N65H5, IKW30N65H5, NGTB30N60S, NGTB30N60SWG, NGTB20N120IHL, NGTB25N120IHL, IRGP6630D

Keywords - IGP30N65H5 transistor spec

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