STGB20H60DF Todos los transistores

 

STGB20H60DF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGB20H60DF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 210 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 11.9 nS

Coesⓘ - Capacitancia de salida, typ: 110 pF

Encapsulados: TO263

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STGB20H60DF datasheet

 ..1. Size:1853K  st
stgb20h60df.pdf pdf_icon

STGB20H60DF

STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 Safe paralleling 3 2 2 1 1 Low thermal resistance TO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diode TAB Applications 3 1 Motor contr

 6.1. Size:473K  st
stgb20h65dfb2.pdf pdf_icon

STGB20H60DF

STGB20H65DFB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a D PAK package Features TAB Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A 2 3 Very fast and soft recovery co-packaged diode 1 Minimized tail current D PAK Tight parameter distribution Low thermal resistance C(2, TAB)

 8.1. Size:1553K  st
stgb20v60f.pdf pdf_icon

STGB20H60DF

STGB20V60F, STGP20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature TJ = 175 C Very high speed switching series TAB TAB Tail-less switching off Low saturation voltage VCE(sat) = 1.8 V (typ.) @ IC = 20 A 3 3 Tight parameters distribution 2 1 1 Safe paralleling D2PAK TO-

 8.2. Size:677K  st
stgb20m65df2.pdf pdf_icon

STGB20H60DF

STGB20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT Features TAB High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution 2 3 Safer paralleling 1 Low thermal resistance D PAK Soft and very fast recovery antiparallel diode C(2, TAB) Applications Motor control UPS G(1)

Otros transistores... IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , AP40G120W , F4-25R12NS4 , IRG7PG35U , SGT40N60NPFDPN , STGP20H60DF , STGW20H60DF , STGWT20H60DF , AUIRGP66524D0 , IRG7PH37K10D , AUIRGP4062D1 , NGTB30N65IHL2 , NGTB30N65IHL2WG .

 

 

 


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