All IGBT. STGB20H60DF Datasheet

 

STGB20H60DF Datasheet and Replacement


   Type Designator: STGB20H60DF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GB20H60DF
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 210 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 11.9 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Qg ⓘ - Total Gate Charge, typ: 115 nC
   Package: TO263
 

 STGB20H60DF substitution

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STGB20H60DF Datasheet (PDF)

 ..1. Size:1853K  st
stgb20h60df.pdf pdf_icon

STGB20H60DF

STGB20H60DF, STGF20H60DF, STGP20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution3 Safe paralleling32211 Low thermal resistanceTO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diodeTABApplications31 Motor contr

 6.1. Size:473K  st
stgb20h65dfb2.pdf pdf_icon

STGB20H60DF

STGB20H65DFB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a DPAK packageFeaturesTAB Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A23 Very fast and soft recovery co-packaged diode1 Minimized tail currentDPAK Tight parameter distribution Low thermal resistanceC(2, TAB)

 8.1. Size:1553K  st
stgb20v60f.pdf pdf_icon

STGB20H60DF

STGB20V60F, STGP20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Very high speed switching seriesTABTAB Tail-less switching off Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A33 Tight parameters distribution211 Safe parallelingD2PAKTO-

 8.2. Size:677K  st
stgb20m65df2.pdf pdf_icon

STGB20H60DF

STGB20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeaturesTAB High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution23 Safer paralleling1 Low thermal resistanceDPAK Soft and very fast recovery antiparallel diodeC(2, TAB)Applications Motor control UPSG(1)

Datasheet: IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , AP40G120W , F4-25R12NS4 , IRG7PG35U , RJP30H1DPD , STGP20H60DF , STGW20H60DF , STGWT20H60DF , AUIRGP66524D0 , IRG7PH37K10D , AUIRGP4062D1 , NGTB30N65IHL2 , NGTB30N65IHL2WG .

Keywords - STGB20H60DF transistor datasheet

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