STGWT20H60DF Todos los transistores

 

STGWT20H60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWT20H60DF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 210 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 11.9 nS
   Coesⓘ - Capacitancia de salida, typ: 110 pF
   Paquete / Cubierta: TO3P
 

 Búsqueda de reemplazo de STGWT20H60DF IGBT

   - Selección ⓘ de transistores por parámetros

 

STGWT20H60DF Datasheet (PDF)

 ..1. Size:1293K  st
stgwt20h60df.pdf pdf_icon

STGWT20H60DF

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

 ..2. Size:1293K  st
stgw20h60df stgwt20h60df.pdf pdf_icon

STGWT20H60DF

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

 5.1. Size:1497K  st
stgwt20h65fb.pdf pdf_icon

STGWT20H60DF

STGFW20H65FB, STGW20H65FB, STGWT20H65FBTrench gate field-stop IGBT, HB series 650 V, 20 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 20 ATO-3P Tight parameters distribution111 Safe paralleling3 Low th

 7.1. Size:2085K  st
stgwt20v60df.pdf pdf_icon

STGWT20H60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete

Otros transistores... CI40T120P , KGF25N120KDA , AP40G120W , F4-25R12NS4 , IRG7PG35U , STGB20H60DF , STGP20H60DF , STGW20H60DF , BT40T60ANF , AUIRGP66524D0 , IRG7PH37K10D , AUIRGP4062D1 , NGTB30N65IHL2 , NGTB30N65IHL2WG , KGT25N135KDH , STGWA30N120KD , KGF40N60PA .

History: IRGS4630D | CM100RX-24S | RJH60D7DPK

 

 
Back to Top

 


History: IRGS4630D | CM100RX-24S | RJH60D7DPK

STGWT20H60DF
  STGWT20H60DF
  STGWT20H60DF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 
Back to Top

 

Popular searches

2sc1166 | jcs9n50fc datasheet | 2n2147 | 2sc870 | 2sa771 | d667 | a965 transistor | hy3210

 


 
.