All IGBT. STGWT20H60DF Datasheet

 

STGWT20H60DF Datasheet and Replacement


   Type Designator: STGWT20H60DF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GWT20H60DF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 210 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 11.9 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Qgⓘ - Total Gate Charge, typ: 115 nC
   Package: TO3P
      - IGBT Cross-Reference

 

STGWT20H60DF Datasheet (PDF)

 ..1. Size:1293K  st
stgwt20h60df.pdf pdf_icon

STGWT20H60DF

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

 ..2. Size:1293K  st
stgw20h60df stgwt20h60df.pdf pdf_icon

STGWT20H60DF

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

 5.1. Size:1497K  st
stgwt20h65fb.pdf pdf_icon

STGWT20H60DF

STGFW20H65FB, STGW20H65FB, STGWT20H65FBTrench gate field-stop IGBT, HB series 650 V, 20 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 20 ATO-3P Tight parameters distribution111 Safe paralleling3 Low th

 7.1. Size:2085K  st
stgwt20v60df.pdf pdf_icon

STGWT20H60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete

Datasheet: CI40T120P , KGF25N120KDA , AP40G120W , F4-25R12NS4 , IRG7PG35U , STGB20H60DF , STGP20H60DF , STGW20H60DF , IHW20N120R3 , AUIRGP66524D0 , IRG7PH37K10D , AUIRGP4062D1 , NGTB30N65IHL2 , NGTB30N65IHL2WG , KGT25N135KDH , STGWA30N120KD , KGF40N60PA .

Keywords - STGWT20H60DF transistor datasheet

 STGWT20H60DF cross reference
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