STGWA30N120KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWA30N120KD
Tipo de transistor: IGBT + Diode
Código de marcado: GWA30N120KD
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 220 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 22 nS
Coesⓘ - Capacitancia de salida, typ: 170 pF
Qgⓘ - Carga total de la puerta, typ: 105 nC
Paquete / Cubierta: TO247
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STGWA30N120KD Datasheet (PDF)
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