All IGBT. STGWA30N120KD Datasheet

 

STGWA30N120KD Datasheet and Replacement


   Type Designator: STGWA30N120KD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GWA30N120KD
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 220 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Qgⓘ - Total Gate Charge, typ: 105 nC
   Package: TO247
      - IGBT Cross-Reference

 

STGWA30N120KD Datasheet (PDF)

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stgwa30n120kd.pdf pdf_icon

STGWA30N120KD

STGW30N120KDSTGWA30N120KD30 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short

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stgwa30ih65df.pdf pdf_icon

STGWA30N120KD

STGWA30IH65DFDatasheetTrench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO247 long leads packageFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 30 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-pa

 7.2. Size:698K  st
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf pdf_icon

STGWA30N120KD

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para

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stgw30m65df2 stgwa30m65df2.pdf pdf_icon

STGWA30N120KD

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery

Datasheet: STGW20H60DF , STGWT20H60DF , AUIRGP66524D0 , IRG7PH37K10D , AUIRGP4062D1 , NGTB30N65IHL2 , NGTB30N65IHL2WG , KGT25N135KDH , IKW75N60T , KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , NGTG50N60FWG , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 .

History: IGC28T65QE | IGC07T120T6L | IGW30N60T | IGC18T120T6L | IGP20N65F5 | IGB50N65S5 | DF650R17IE4D_B2

Keywords - STGWA30N120KD transistor datasheet

 STGWA30N120KD cross reference
 STGWA30N120KD equivalent finder
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