NGTG50N60FWG Todos los transistores

 

NGTG50N60FWG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTG50N60FWG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 223 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 43 nS
   Coesⓘ - Capacitancia de salida, typ: 195 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de NGTG50N60FWG IGBT

   - Selección ⓘ de transistores por parámetros

 

NGTG50N60FWG Datasheet (PDF)

 ..1. Size:174K  onsemi
 ngtg50n60fwg.pdf pdf_icon

NGTG50N60FWG

NGTG50N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation50 A, 600 V

 4.1. Size:169K  onsemi
 ngtg50n60flwg.pdf pdf_icon

NGTG50N60FWG

NGTG50N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

Otros transistores... NGTB30N65IHL2 , NGTB30N65IHL2WG , KGT25N135KDH , STGWA30N120KD , KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , RJH3047 , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF .

 

 
Back to Top

 


 
.