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NGTG50N60FWG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTG50N60FWG

Código: G50N60F

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 223

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.45

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 50

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 43

Capacitancia de salida (Cc), pF: 195

Empaquetado / Estuche: TO247

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NGTG50N60FWG Datasheet (PDF)

1.1. ngtg50n60fwg.pdf Size:174K _igbt

NGTG50N60FWG
NGTG50N60FWG

NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation 50 A, 600 V

1.2. ngtg50n60flwg.pdf Size:169K _igbt

NGTG50N60FWG
NGTG50N60FWG

NGTG50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System

Otros transistores... NGTB30N65IHL2 , NGTB30N65IHL2WG , KGT25N135KDH , STGWA30N120KD , KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , IRG4PC50U , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF .

 


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Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras