All IGBT. NGTG50N60FWG Datasheet

 

NGTG50N60FWG Datasheet and Replacement


   Type Designator: NGTG50N60FWG
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 223 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 195 pF
   Package: TO247
 

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NGTG50N60FWG Datasheet (PDF)

 ..1. Size:174K  onsemi
 ngtg50n60fwg.pdf pdf_icon

NGTG50N60FWG

NGTG50N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation50 A, 600 V

 4.1. Size:169K  onsemi
 ngtg50n60flwg.pdf pdf_icon

NGTG50N60FWG

NGTG50N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

Datasheet: NGTB30N65IHL2 , NGTB30N65IHL2WG , KGT25N135KDH , STGWA30N120KD , KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , RJH3047 , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF .

Keywords - NGTG50N60FWG transistor datasheet

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