NGTG50N60FWG Datasheet and Replacement
Type Designator: NGTG50N60FWG
Type: IGBT
Marking Code: G50N60F
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 223 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 43 nS
Coesⓘ - Output Capacitance, typ: 195 pF
Qg ⓘ - Total Gate Charge, typ: 310 nC
Package: TO247
NGTG50N60FWG substitution
NGTG50N60FWG Datasheet (PDF)
ngtg50n60fwg.pdf

NGTG50N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation50 A, 600 V
ngtg50n60flwg.pdf

NGTG50N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG200DR060UZK | TGAN15S135FD
Keywords - NGTG50N60FWG transistor datasheet
NGTG50N60FWG cross reference
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History: MMG200DR060UZK | TGAN15S135FD



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