IHW40N65R5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW40N65R5
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 230 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 44 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
IHW40N65R5 Datasheet (PDF)
ihw40n65r5.pdf

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW40N65R5Data sheetIndustrial Power ControlIHW40N65R5Resonant Switching SeriesReverse-Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru
ihw40n60t.pdf

IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution
ihw40n60rf ver2 3g.pdf

IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for
ihw40n60t-d20rev2 3.pdf

IHW40N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggednes
Otros transistores... KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , NGTG50N60FWG , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , CRG60T60AN3H , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK .
History: IGB01N120H2 | APT20GF120BRG | IXA20PG1200DHGLB | OST75N65HSXF | OST40N65HEMF | IRGI4086 | IRGB6B60K
History: IGB01N120H2 | APT20GF120BRG | IXA20PG1200DHGLB | OST75N65HSXF | OST40N65HEMF | IRGI4086 | IRGB6B60K



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