IHW40N65R5 Todos los transistores

 

IHW40N65R5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW40N65R5

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 230 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 44 pF

Encapsulados: TO247

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IHW40N65R5 datasheet

 ..1. Size:2129K  infineon
 ihw40n65r5.pdf pdf_icon

IHW40N65R5

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW40N65R5 Data sheet Industrial Power Control IHW40N65R5 Resonant Switching Series Reverse-Conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru

 7.1. Size:454K  infineon
 ihw40n60t.pdf pdf_icon

IHW40N65R5

IHW40T60 TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop -technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5 s G E Trench and fieldstop technology for 600 V applications offers - very tight parameter distribution

 7.2. Size:788K  infineon
 ihw40n60rf ver2 3g.pdf pdf_icon

IHW40N65R5

IHW40N60RF IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for

 7.3. Size:378K  infineon
 ihw40n60t-d20rev2 3.pdf pdf_icon

IHW40N65R5

IHW40N60T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop -technology with anti-parallel diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution - high ruggednes

MOSTRAR MÁS

Otros transistores... KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , NGTG50N60FWG , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , SGT40N60FD2PN , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK .

History: IRG8B08N120KD

 

 

 


 
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