IHW40N65R5 Datasheet and Replacement
Type Designator: IHW40N65R5
Type: IGBT + Anti-Parallel Diode
Marking Code: H40ER5
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 44 pF
Qg ⓘ - Total Gate Charge, typ: 193 nC
Package: TO247
IHW40N65R5 substitution
IHW40N65R5 Datasheet (PDF)
ihw40n65r5.pdf

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW40N65R5Data sheetIndustrial Power ControlIHW40N65R5Resonant Switching SeriesReverse-Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru
ihw40n60t.pdf

IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution
ihw40n60rf ver2 3g.pdf

IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for
ihw40n60t-d20rev2 3.pdf

IHW40N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggednes
Datasheet: KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , NGTG50N60FWG , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , SGT40N60FD2PN , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK .
History: MG200Q2YS40 | IXSH30N60U1 | 2MBI300LB-060 | YGW25N120F1A1 | AUIRGB4062D1
Keywords - IHW40N65R5 transistor datasheet
IHW40N65R5 cross reference
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History: MG200Q2YS40 | IXSH30N60U1 | 2MBI300LB-060 | YGW25N120F1A1 | AUIRGB4062D1



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