All IGBT. IHW40N65R5 Datasheet

 

IHW40N65R5 IGBT. Datasheet pdf. Equivalent


   Type Designator: IHW40N65R5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H40ER5
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 230
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.35
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 25
   Collector Capacity (Cc), typ, pF: 44
   Package: TO247

 IHW40N65R5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IHW40N65R5 Datasheet (PDF)

 ..1. Size:2129K  infineon
ihw40n65r5.pdf

IHW40N65R5
IHW40N65R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW40N65R5Data sheetIndustrial Power ControlIHW40N65R5Resonant Switching SeriesReverse-Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

 7.1. Size:454K  infineon
ihw40n60t.pdf

IHW40N65R5
IHW40N65R5

IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution

 7.2. Size:788K  infineon
ihw40n60rf ver2 3g.pdf

IHW40N65R5
IHW40N65R5

IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for

 7.3. Size:378K  infineon
ihw40n60t-d20rev2 3.pdf

IHW40N65R5
IHW40N65R5

IHW40N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggednes

 7.4. Size:792K  infineon
ihw40n60r 2 4.pdf

IHW40N65R5
IHW40N65R5

IHW40N60RIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coeffici

 7.5. Size:2029K  infineon
ihw40n60rf.pdf

IHW40N65R5
IHW40N65R5

IGBTReverse conducting IGBTIHW40N60RFResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RFResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temp

 7.6. Size:2060K  infineon
ihw40n60r.pdf

IHW40N65R5
IHW40N65R5

IGBTReverse conducting IGBTIHW40N60RResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temper

Datasheet: KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , NGTG50N60FWG , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , CM20MD-12H , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK .

 

 
Back to Top