IHW40N65R5 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IHW40N65R5

Маркировка: H40ER5

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 230

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.35

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 80

Максимальная температура перехода (Tj): 175

Время нарастания: 25

Емкость коллектора (Cc), pf: 44

Тип корпуса: TO247

Аналог (замена) для IHW40N65R5

IHW40N65R5 Datasheet (PDF)

..1. ihw40n65r5.pdf Size:2092K _infineon

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW40N65R5Data sheetIndustrial Power ControlIHW40N65R5Resonant Switching SeriesReverse-Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

7.1. ihw40n60r.pdf Size:748K _infineon

IHW40N60RIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coeffici

7.2. ihw40n60rf.pdf Size:742K _infineon

IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for

 7.3. ihw40n60r 2 4.pdf Size:792K _infineon

IHW40N60RIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coeffici

7.4. ihw40n60t.pdf Size:454K _infineon

IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution

 7.5. ihw40n60t-d20rev2 3.pdf Size:378K _infineon

IHW40N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggednes

7.6. ihw40n60rf ver2 3g.pdf Size:788K _infineon

IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for

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