20MT120UFP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 20MT120UFP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 240 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.29 V @25℃
Coesⓘ - Capacitancia de salida, typ: 344 pF
Encapsulados: MODULE
Búsqueda de reemplazo de 20MT120UFP IGBT
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20MT120UFP datasheet
20mt120ufp.pdf
20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA MTP Aluminum nitride DBC Very low stray inductance
vs-20mt120ufp.pdf
VS-20MT120UFP www.vishay.com Vishay Semiconductors Full Bridge IGBT MTP (Ultrafast NPT IGBT), 40 A FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low s
20mt120ufapbf.pdf
20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate MTP Very low stray inductance d
vs-20mt120ufapbf.pdf
VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low
Otros transistores... KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , YGW60N65F1A1 , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK , AUIRGB4062D1 , AUIRGS4062D1 , AUIRGSL4062D1 , KGF40N60KDA , KGT30N135KDH .
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