20MT120UFP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 20MT120UFP
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 240 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.29 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
Coesⓘ - Capacitancia de salida, typ: 344 pF
Qgⓘ - Carga total de la puerta, typ: 176 nC
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
20MT120UFP Datasheet (PDF)
20mt120ufp.pdf

20MT120UFPVishay High Power Products"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverserecovery Low diode VF Square RBSOAMTP Aluminum nitride DBC Very low stray inductance
vs-20mt120ufp.pdf

VS-20MT120UFPwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 40 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low s
20mt120ufapbf.pdf

20MT120UFAPbFVishay Semiconductors"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverserecovery Low diode VF Square RBSOA Al2O3 DBC substrateMTP Very low stray inductance d
vs-20mt120ufapbf.pdf

VS-20MT120UFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low
Otros transistores... KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , RJH3047 , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK , AUIRGB4062D1 , AUIRGS4062D1 , AUIRGSL4062D1 , KGF40N60KDA , KGT30N135KDH .
History: TGAN80N65F2DS | IRGI4086 | YGW15N120T3 | MM75G3T65B
History: TGAN80N65F2DS | IRGI4086 | YGW15N120T3 | MM75G3T65B



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