All IGBT. 20MT120UFP Datasheet

 

20MT120UFP Datasheet and Replacement


   Type Designator: 20MT120UFP
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 240 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.29 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 344 pF
   Package: MODULE
 

 20MT120UFP substitution

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20MT120UFP Datasheet (PDF)

 ..1. Size:310K  vishay
20mt120ufp.pdf pdf_icon

20MT120UFP

20MT120UFPVishay High Power Products"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverserecovery Low diode VF Square RBSOAMTP Aluminum nitride DBC Very low stray inductance

 0.1. Size:263K  vishay
vs-20mt120ufp.pdf pdf_icon

20MT120UFP

VS-20MT120UFPwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 40 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low s

 5.1. Size:220K  vishay
20mt120ufapbf.pdf pdf_icon

20MT120UFP

20MT120UFAPbFVishay Semiconductors"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverserecovery Low diode VF Square RBSOA Al2O3 DBC substrateMTP Very low stray inductance d

 5.2. Size:220K  vishay
vs-20mt120ufapbf.pdf pdf_icon

20MT120UFP

VS-20MT120UFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MG150J1BS11 | TGAN40N60F2D | 2MBI200J-120 | AOKS30B60D1 | OST50N65HF | SII100N12 | TGAN80N65F2DS

Keywords - 20MT120UFP transistor datasheet

 20MT120UFP cross reference
 20MT120UFP equivalent finder
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