SML75HB06 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SML75HB06
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 22 nS
Paquete / Cubierta: MODULE
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SML75HB06 Datasheet (PDF)
sml75hb06.pdf

SML75HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 VVces DC Collector Current Tc=75C Ic, nom 75 A Tc=25C Ic 100 Repetitive peak Collector Cur- tp=1msec,Tc=75C Icrm 150 Arent Total PowerDissipation Tc=25C Ptot 260 WGate-emit
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: TT050U065FBC | BSM50GD60DLC_E3226 | STGW40NC60W | NGTB50N120FL2WG | OST20N135HRF | FGH60T65SQD-F155 | IXGN200N60
History: TT050U065FBC | BSM50GD60DLC_E3226 | STGW40NC60W | NGTB50N120FL2WG | OST20N135HRF | FGH60T65SQD-F155 | IXGN200N60



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