SML75HB06 Specs and Replacement
Type Designator: SML75HB06
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Package: MODULE SML75HB06 Substitution - IGBT ⓘ Cross-Reference Search
SML75HB06 datasheet
sml75hb06.pdf
SML75HB06 Attributes -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 V Vces DC Collector Current Tc=75C Ic, nom 75 A Tc=25C Ic 100 Repetitive peak Collector Cur- tp=1msec,Tc=75C Icrm 150 A rent Total PowerDissipation Tc=25C Ptot 260 W Gate-emit... See More ⇒
Specs: IGW40N65F5 , IKP40N65F5 , IKW40N65F5 , NGTB40N60FLWG , STGW15S120DF3 , STGW20IH125DF , STGWA15S120DF3 , STGWT20IH125DF , GT30F125 , MMG50H120X6TN , MMG50S120B6TN , MMG50W120XB6TN , NGTB30N120L , NGTB30N120LWG , NGTB40N120L , NGTB40N120LWG , STGB30H60DLFB .
History: STGP30H60DF | STGW30H60DF
Keywords - SML75HB06 transistor spec
SML75HB06 cross reference
SML75HB06 equivalent finder
SML75HB06 lookup
SML75HB06 substitution
SML75HB06 replacement
History: STGP30H60DF | STGW30H60DF
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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