All IGBT. SML75HB06 Datasheet

 

SML75HB06 IGBT. Datasheet pdf. Equivalent


   Type Designator: SML75HB06
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 22 nS
   Package: MODULE

 SML75HB06 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SML75HB06 Datasheet (PDF)

 ..1. Size:625K  semelab
 sml75hb06.pdf

SML75HB06 SML75HB06

SML75HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 VVces DC Collector Current Tc=75C Ic, nom 75 A Tc=25C Ic 100 Repetitive peak Collector Cur- tp=1msec,Tc=75C Icrm 150 Arent Total PowerDissipation Tc=25C Ptot 260 WGate-emit

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top