HGTD7N60C3S9A Todos los transistores

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HGTD7N60C3S9A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTD7N60C3S9A

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2V

Tensión emisor-compuerta (Veg): 20V

Corriente del colector DC máxima (Ic): 14A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 8.5

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO252AA

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HGTD7N60C3S9A Datasheet (PDF)

1.1. hgtd7n60c3s hgtp7n60c3.pdf Size:161K _fairchild_semi

HGTD7N60C3S9A
HGTD7N60C3S9A

HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC h

2.1. hgtd7n60.pdf Size:222K _harris_semi

HGTD7N60C3S9A
HGTD7N60C3S9A

HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging JEDEC TO-220AB 14A, 600V at TC = +25oC COLLECTOR EMITTER 600V Switching SOA Capability GATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit Rating Low Conduction Loss COLLECTOR (FLANGE) Description JEDEC TO-251AA The HGTD7N60C3, HGTD7N60C3

Otros transistores... HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , IRG4PF50W , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 .

 


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