Справочник IGBT. HGT1S2N120CNS

 

HGT1S2N120CNS - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HGT1S2N120CNS
   Тип транзистора: IGBT
   Маркировка: 2N120CN
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 13 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.05 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.7(typ) V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 11 nS
   Qgⓘ - Общий заряд затвора, typ: 30 nC
   Тип корпуса: TO263

 Аналог (замена) для HGT1S2N120CNS

 

 

HGT1S2N120CNS Datasheet (PDF)

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HGT1S2N120CNS HGT1S2N120CNS

HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at

 2.1. Size:498K  1
 hgtp2n120cn hgt1s2n120cn.pdf

HGT1S2N120CNS HGT1S2N120CNS

March 2005HGTP2N120CN, HGT1S2N120CN13A, 1200V, NPT Series N-Channel IGBTFeatures Description 13A, 1200V, TC = 25C The HGTP2N120CN and HGT1S2N120CN are Non-PunchThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150C the best features of MOSF

 2.2. Size:92K  1
 hgtp2n120cnd hgt1s2n120cnds.pdf

HGT1S2N120CNS HGT1S2N120CNS

HGTP2N120CND, HGT1S2N120CNDSData Sheet January 2000 File Number 4681.213A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oCThe HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oCmembers

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 hgtp2n120bnd hgt1s2n120bnds.pdf

HGT1S2N120CNS HGT1S2N120CNS

HGTP2N120BND, HGT1S2N120BNDSData Sheet January 2000 File Number 4698.212A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 12A, 1200V, TC = 25oCThe HGTP2N120BND and HGT1S2N120BNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oCmembers o

Другие IGBT... HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , RJH60F5DPQ-A0 , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 .

 

 
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