HGT1S2N120CNS - аналоги и описание IGBT

 

HGT1S2N120CNS - аналоги, основные параметры, даташиты

Наименование: HGT1S2N120CNS

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 104 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 13 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.05 V @25℃

tr ⓘ - Время нарастания типовое: 11 nS

Тип корпуса: TO263

 Аналог (замена) для HGT1S2N120CNS

- подбор ⓘ IGBT транзистора по параметрам

 

HGT1S2N120CNS даташит

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HGT1S2N120CNS

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT Features The HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oC HGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at

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HGT1S2N120CNS

March 2005 HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Features Description 13A, 1200V, TC = 25 C The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150 C the best features of MOSF

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HGT1S2N120CNS

HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oC The HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC members

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HGT1S2N120CNS

HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 File Number 4698.2 12A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 12A, 1200V, TC = 25oC The HGTP2N120BND and HGT1S2N120BNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC members o

Другие IGBT... HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , JT075N065WED , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 .

History: SL15T65FF | IXGH28N30A

 

 

 

 

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