All IGBT. HGTD7N60C3S9A Datasheet


HGTD7N60C3S9A IGBT. Datasheet pdf. Equivalent

Type Designator: HGTD7N60C3S9A

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 14A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 8.5

Package: TO252AA

HGTD7N60C3S9A Transistor Equivalent Substitute - IGBT Cross-Reference Search


HGTD7N60C3S9A Datasheet (PDF)

1.1. hgtd7n60c3s hgtp7n60c3.pdf Size:161K _fairchild_semi


HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC h

2.1. hgtd7n60.pdf Size:222K _harris_semi


HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging JEDEC TO-220AB 14A, 600V at TC = +25oC COLLECTOR EMITTER 600V Switching SOA Capability GATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit Rating Low Conduction Loss COLLECTOR (FLANGE) Description JEDEC TO-251AA The HGTD7N60C3, HGTD7N60C3

Datasheet: HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , IRG4PF50W , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 .





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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |