IKW50N65H5A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW50N65H5A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 270 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Coesⓘ - Capacitancia de salida, typ: 69 pF
Paquete / Cubierta: TO247
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IKW50N65H5A Datasheet (PDF)
ikw50n65h5a.pdf
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ikw50n65eh5.pdf
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ikw50n65f5.pdf
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aikw50n65df5.pdf
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ikw50n65f5a.pdf
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