IKW50N65H5A IGBT. Datasheet pdf. Equivalent
Type Designator: IKW50N65H5A
Type: IGBT + Anti-Parallel Diode
Marking Code: K50EH5A
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 69 pF
Qgⓘ - Total Gate Charge, typ: 116 nC
Package: TO247
IKW50N65H5A Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW50N65H5A Datasheet (PDF)
ikw50n65h5a.pdf
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ikw50n65h5.pdf
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ikw50n65eh5.pdf
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ikw50n65f5.pdf
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aikw50n65df5.pdf
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ikw50n65f5a.pdf
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