IKW50N65H5A - аналоги, основные параметры, даташиты
Наименование: IKW50N65H5A
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 270 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.66 V @25℃
tr ⓘ - Время нарастания типовое: 12 nS
Coesⓘ - Выходная емкость, типовая: 69 pF
Тип корпуса: TO247
Аналог (замена) для IKW50N65H5A
- подбор ⓘ IGBT транзистора по параметрам
IKW50N65H5A даташит
ikw50n65h5a.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW50N65H5A 650V DuoPack IGBT and diode High speed switching series fifth generation Data sheet Industrial Power Control IKW50N65H5A High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antipar
ikw50n65h5.pdf
IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW50N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKW50N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode
ikw50n65wr5.pdf
Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW50N65WR5 Data sheet Inductrial Power Control IKW50N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior
aikw50n65dh5.pdf
AIKW50N65DH5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E
Другие IGBT... STGWT30H65FB , STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A , IKW50N65F5A , RJP30E2DPP-M0 , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 .
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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