STGWT40H65FB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWT40H65FB 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 283 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 13 nS
Coesⓘ - Capacitancia de salida, typ: 198 pF
Encapsulados: TO3P
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STGWT40H65FB datasheet
stgwt40h65fb.pdf
STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 High speed switching series 3 Minimized tail current 2 1 Very low saturation voltage VCE(sat) = 1.6 V TAB TO-3PF (typ.) @ IC = 40 A Tight parameters distribution
stgwt40h60dlfb.pdf
STGW40H60DLFB, STGWT40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A 3 2 3 Tight parameters distribution 1 2 Safe paralleling 1 L
stgwt40hp65fb.pdf
STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB Maximum junction temperature T = 175 C J Minimized tail current V = 1.6 V (typ.) @ I = 40 A CE(sat) C Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 2 1 Low thermal resistance TO-3P Applica
Otros transistores... STGW40H65DFB, STGW40H65FB, STGW40V60DF, STGW40V60DLF, STGW40V60F, STGWA15M120DF3, STGWT40H60DLFB, STGWT40H65DFB, IKW50N60T, STGWT40V60DF, STGWT40V60DLF, STGW50HF65SD, STGWT50HF65SD, IHW20N120R5, IHW20N135R5, MM60G60B, RJH1CV6DPK
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