All IGBT. STGWT40H65FB Datasheet

 

STGWT40H65FB IGBT. Datasheet pdf. Equivalent


   Type Designator: STGWT40H65FB
   Type: IGBT
   Marking Code: GWT40H65FB
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 283 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 198 pF
   Qgⓘ - Total Gate Charge, typ: 210 nC
   Package: TO3P

 STGWT40H65FB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGWT40H65FB Datasheet (PDF)

 ..1. Size:1573K  st
 stgwt40h65fb.pdf

STGWT40H65FB STGWT40H65FB

STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution

 4.1. Size:1516K  st
 stgwt40h65dfb.pdf

STGWT40H65FB STGWT40H65FB

STGW40H65DFB STGWT40H65DFBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Very low saturation voltage: VCE(sat) = 1.60 V (typ.) @ IC = 40 A3322 Tight parameters distribution11 Safe paralleling

 5.1. Size:1485K  st
 stgwt40h60dlfb.pdf

STGWT40H65FB STGWT40H65FB

STGW40H60DLFB, STGWT40H60DLFBTrench gate field-stop IGBT, HB series 600 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A323 Tight parameters distribution12 Safe paralleling1 L

 6.1. Size:903K  1
 stgwt40hp65fb.pdf

STGWT40H65FB STGWT40H65FB

STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB Maximum junction temperature: T = 175 C J Minimized tail current V = 1.6 V (typ.) @ I = 40 A CE(sat) C Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 21 Low thermal resistance TO-3PApplica

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