IHW20N120R5 Todos los transistores

 

IHW20N120R5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IHW20N120R5
   Tipo de transistor: IGBT + Diode
   Código de marcado: H20MR5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 288 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 43 pF
   Qgⓘ - Carga total de la puerta, typ: 170 nC
   Paquete / Cubierta: TO247
 

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IHW20N120R5 Datasheet (PDF)

 ..1. Size:1903K  infineon
 ihw20n120r5.pdf pdf_icon

IHW20N120R5

Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeIHW20N120R5Data sheetIndustrial Power ControlIHW20N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distri

 4.1. Size:794K  infineon
 ihw20n120r3 rev2 5g.pdf pdf_icon

IHW20N120R5

IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi

 4.2. Size:551K  infineon
 ihw20n120r2 h20r1202.pdf pdf_icon

IHW20N120R5

H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig

 4.3. Size:1861K  infineon
 ihw20n120r3.pdf pdf_icon

IHW20N120R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW20N120R3Data sheetIndustrial Power ControlIHW20N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight

MOSTRAR MÁS

Otros transistores... STGWA15M120DF3 , STGWT40H60DLFB , STGWT40H65DFB , STGWT40H65FB , STGWT40V60DF , STGWT40V60DLF , STGW50HF65SD , STGWT50HF65SD , CRG15T120BNR3S , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S .

 

 
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