All IGBT. IHW20N120R5 Datasheet

 

IHW20N120R5 IGBT. Datasheet pdf. Equivalent


   Type Designator: IHW20N120R5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H20MR5
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 288
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 40
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
   Maximum Junction Temperature (Tj), ℃: 175
   Collector Capacity (Cc), typ, pF: 43
   Package: TO247

 IHW20N120R5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IHW20N120R5 Datasheet (PDF)

 ..1. Size:1903K  infineon
ihw20n120r5.pdf

IHW20N120R5
IHW20N120R5

Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeIHW20N120R5Data sheetIndustrial Power ControlIHW20N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distri

 4.1. Size:794K  infineon
ihw20n120r3 rev2 5g.pdf

IHW20N120R5
IHW20N120R5

IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi

 4.2. Size:551K  infineon
ihw20n120r2 h20r1202.pdf

IHW20N120R5
IHW20N120R5

H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig

 4.3. Size:1861K  infineon
ihw20n120r3.pdf

IHW20N120R5
IHW20N120R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW20N120R3Data sheetIndustrial Power ControlIHW20N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , YGW60N65F1A1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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