All IGBT. IHW20N120R5 Datasheet

 

IHW20N120R5 Datasheet and Replacement


   Type Designator: IHW20N120R5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H20MR5
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 288 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 43 pF
   Qgⓘ - Total Gate Charge, typ: 170 nC
   Package: TO247
      - IGBT Cross-Reference

 

IHW20N120R5 Datasheet (PDF)

 ..1. Size:1903K  infineon
ihw20n120r5.pdf pdf_icon

IHW20N120R5

Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeIHW20N120R5Data sheetIndustrial Power ControlIHW20N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distri

 4.1. Size:794K  infineon
ihw20n120r3 rev2 5g.pdf pdf_icon

IHW20N120R5

IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi

 4.2. Size:551K  infineon
ihw20n120r2 h20r1202.pdf pdf_icon

IHW20N120R5

H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig

 4.3. Size:1861K  infineon
ihw20n120r3.pdf pdf_icon

IHW20N120R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW20N120R3Data sheetIndustrial Power ControlIHW20N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight

Datasheet: STGWA15M120DF3 , STGWT40H60DLFB , STGWT40H65DFB , STGWT40H65FB , STGWT40V60DF , STGWT40V60DLF , STGW50HF65SD , STGWT50HF65SD , TGAN60N60F2DS , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S .

History: APT100GT60JRDL

Keywords - IHW20N120R5 transistor datasheet

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