NGTG15N120FL2WG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTG15N120FL2WG
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 147 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 104 nS
Coesⓘ - Capacitancia de salida, typ: 88 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de NGTG15N120FL2WG IGBT
NGTG15N120FL2WG Datasheet (PDF)
ngtg15n120fl2wg.pdf
NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef
ngtg15n120fl2.pdf
NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef
ngtg15n60s1.pdf
NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.
ngtg15n60s1eg.pdf
NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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