All IGBT. NGTG15N120FL2WG Datasheet

 

NGTG15N120FL2WG Datasheet and Replacement


   Type Designator: NGTG15N120FL2WG
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 147 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 104 nS
   Coesⓘ - Output Capacitance, typ: 88 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTG15N120FL2WG Datasheet (PDF)

 0.1. Size:226K  onsemi
 ngtg15n120fl2wg.pdf pdf_icon

NGTG15N120FL2WG

NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef

 1.1. Size:226K  onsemi
 ngtg15n120fl2.pdf pdf_icon

NGTG15N120FL2WG

NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef

 7.1. Size:168K  onsemi
 ngtg15n60s1.pdf pdf_icon

NGTG15N120FL2WG

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.

 7.2. Size:124K  onsemi
 ngtg15n60s1eg.pdf pdf_icon

NGTG15N120FL2WG

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com

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Datasheet: STGWT50HF65SD , IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , IKW30N60H3 , NGTB60N60S , NGTB60N60SWG , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG .

History: STGW60H65F | PPNHZ52F120A

Keywords - NGTG15N120FL2WG transistor datasheet

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