Справочник IGBT. NGTG15N120FL2WG

 

NGTG15N120FL2WG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NGTG15N120FL2WG
   Тип транзистора: IGBT
   Маркировка: G15N120FL2
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 147 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 15 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 104 nS
   Coesⓘ - Выходная емкость, типовая: 88 pF
   Qgⓘ - Общий заряд затвора, typ: 109 nC
   Тип корпуса: TO247

 Аналог (замена) для NGTG15N120FL2WG

 

 

NGTG15N120FL2WG Datasheet (PDF)

 0.1. Size:226K  onsemi
 ngtg15n120fl2wg.pdf

NGTG15N120FL2WG NGTG15N120FL2WG

NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef

 1.1. Size:226K  onsemi
 ngtg15n120fl2.pdf

NGTG15N120FL2WG NGTG15N120FL2WG

NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef

 7.1. Size:168K  onsemi
 ngtg15n60s1.pdf

NGTG15N120FL2WG NGTG15N120FL2WG

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.

 7.2. Size:124K  onsemi
 ngtg15n60s1eg.pdf

NGTG15N120FL2WG NGTG15N120FL2WG

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com

Другие IGBT... STGWT50HF65SD , IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , TGD30N40P , NGTB60N60S , NGTB60N60SWG , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG .

 

 
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