NGTG15N120FL2WG - аналоги и описание IGBT

 

Аналоги NGTG15N120FL2WG. Основные параметры


   Наименование: NGTG15N120FL2WG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 147 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 15 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 104 nS
   Coesⓘ - Выходная емкость, типовая: 88 pF
   Тип корпуса: TO247
 

 Аналог (замена) для NGTG15N120FL2WG

   - подбор ⓘ IGBT транзистора по параметрам

 

NGTG15N120FL2WG даташит

 0.1. Size:226K  onsemi
 ngtg15n120fl2wg.pdf pdf_icon

NGTG15N120FL2WG

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef

 1.1. Size:226K  onsemi
 ngtg15n120fl2.pdf pdf_icon

NGTG15N120FL2WG

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef

 7.1. Size:168K  onsemi
 ngtg15n60s1.pdf pdf_icon

NGTG15N120FL2WG

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http //onsemi.

 7.2. Size:124K  onsemi
 ngtg15n60s1eg.pdf pdf_icon

NGTG15N120FL2WG

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching www.onsemi.com

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STGWT50HF65SD , IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , SGP30N60 , NGTB60N60S , NGTB60N60SWG , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG .

History: IRGS10B60KD | NGB8206AN

 

 

 


 
↑ Back to Top
.